第73号 2024年度 VII. 発表業績

著書および学術雑誌等に発表したもの

著書および学術雑誌等に発表したもの

部門・センター:

  • Time-resolved Analysis Using Scanning Probe Methods (Invited):T.Takahashi・4th TSMC-UTokyo Symposium, オンライン, 2024.7D
  • Cross-sectional Investigation by Dual Bias Modulation Electrostatic Force Microscopy on n-type Si/Si Junction Fabricated by Surface-activated Bonding:D.Kobayashi, R.Fukuzawa, N.Shigekawa, J.Liang, T.Takahashi・2024 8th International Workshop on Low Temperature Bonding for 3D Integration, 奈良, [2024 8th International Workshop on Low Temperature Bonding for 3D Integration, 30O-03, 2024.10], 2024.10D
  • Dual bias modulation electrostatic force microscopy for variable frequency capacitance measurements (Invited):R.Fukuzawa, T.Takahashi・32nd International Colloquium on Scanning Probe Microscopy / International Scanning Probe Microscopy Conference 2024, 札幌, [32nd International Colloquium on Scanning Probe Microscopy / International Scanning Probe Microscopy Conference 2024, 2B-1, 2024.11], 2024.11D
  • Characterization of solar cell materials using time-resolved electrostatic force microscopy under base-bias-level control:K.Takemoto, J.Sato, R.Ishibashi, T.Takahashi・32nd International Colloquium on Scanning Probe Microscopy / International Scanning Probe Microscopy Conference 2024, 札幌, [32nd International Colloquium on Scanning Probe Microscopy / International Scanning Probe Microscopy Conference 2024, 6B-2, 2024.11], 2024.11D
  • 基準電位制御法を導入した時間分解静電引力顕微鏡による太陽電池材料評価:竹本開太, 佐藤捷, 石橋亮太, 高橋琢二・2024年 第85回 応用物理学会 秋季学術講演会, 新潟, [2024年 第85回 応用物理学会 秋季学術講演会, 17p-B4-12, 2024.9], 2024.9E
  • 導電性ナノ探針を用いた静電引力計測による半導体の局所評価 (招待講演):福澤亮太, 高橋琢二・M&BE 未来技術研究会, オンライン, [M&BE 未来技術研究会, Vol.36, no.1, 8, 2025.3], 2025.3E
  • 探針−金属間容量の平行平板近似に関するパラメータの決定法:福澤亮太, 高橋琢二・2025年 第72回 応用物理学会 春季学術講演会, 野田市, [2025年 第72回 応用物理学会 春季学術講演会 予稿集, 17p-K503-12, 2025.3], 2025.3E
  • SAB法にて作製したSi/Si接合の断面上での静電引力顕微鏡計測 (招待講演):小林大地, 福澤亮太, 重川直輝, 梁剣波, 高橋琢二・一般社団法人電子実装工学研究所IMSI会員会, 東京, 2025.3E
  • Tailoring Good Atomic Force Microscopy Tips with Better Probability (Plenary):Hideki Kawakatsu・ASIATRIB AND CICT2024, TIANJIN. CHINA, 2024.9D
  • From Imaging the Trajectory of a Single Asperity to Colour Atomic Force Microscopy, Tip Functionalisation and Assisted Reproductive Technology (Keynote):Hideki Kawakatsu・ASIATRIB AND CICT2024, TIANJIN. CHINA, 2024.9D
  • From Atomic Force Microscopy to Assisted Reproductive Technology (Plenary):Hideki Kawakatsu・NAMIS Marathon Workshop, 新竹, 台湾, [Abstracts of NAMIS Marathon Workshop 2024, 2024.12], 2024.11D
  • A Flexible Variable Resistor under Single-Point Loading:Ken Nakayama, Dai Kobayashi, Hideki Kawakasu・NAMIS Marathon Workshop 2024, 新竹, 台湾, [Abstracts of NAMIS Marathon Workshop 2024, 2024.12], 2024.11D
  • 導電性ポリマーを用いた通電再生型デシカント空調に関する研究 その 6:通電再生モジュールの電気的特性及び吸放湿挙動の検討:楊子葳, 小林光, 西山陽歌, 川勝英樹, 小林大, 金井大介・日本建築学会大会学術講演会(関東), 東京 明治大学駿河台キャンパス, [日本建築学会大会学術講演梗概集(関東), 1571-1571, 2024], 2024.8E
  • Mechanism of Gate Voltage Spike under Digital Gate Control at IGBT Switching Operations:Z. Lou, T. Mamee, K. Hata, M. Takamiya, S. Nishizawa, and W. Saito・Elsevier Power Electronic Devices and Components, Vol. 7, 100054, pp. 1 - 7, 2024.4C
  • Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN):T. Mamee, Z. Lou, K. Hata, M. Takamiya, T. Sakurai, S. -I. Nishizawa, and W. Saito・IEEE Access, Vol.12, pp. 96936 - 96945, 2024.7C
  • Active Gate Driver IC Integrating Gate Voltage Sensing Technique for SiC MOSFETs:T. -W. Wang, L. -C. Chen, M. Takamiya, and P. -H. Chen・IEEE Transactions on Power Electronics, Vol.39, No.7, pp. 8562 - 8571, 2024.7C
  • Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs:K. Horii, K. Hata, S. Hayashi, K. Wada, I. Omura, and M. Takamiya・IEEE Transactions on Power Electronics, Vol.40, No.1, pp. 467 - 485, 2025.1C
  • Injecting Digital into Power Electronics via Gate Driver ICs (Keynote):M. Takamiya・IEEE 10th International Power Electronics and Motion Control Conference-ECCE Asia (IPEMC 2024-ECCE Asia), Chengdu, China, 2024.5D
  • Active Gate Driving With Full 6-Bit Resolution for Different SiC MOSFETs Using Variable Gate Current Range Digital Gate Driver IC:H. Zhou, T. Inuma, D. Zhang, K. Hata, and M. Takamiya・IEEE 10th International Power Electronics and Motion Control Conference-ECCE Asia (IPEMC 2024-ECCE Asia), Chengdu, China, [Proceedings, pp. 1-5], 2024.5D
  • Bond Wire Lift-off Sensor Circuit for Power Devices Integrated in Gate Driver IC:Y. Liang, H. Yano, H. Zhou, K. Hata, and M. Takamiya・IEEE 10th International Power Electronics and Motion Control Conference-ECCE Asia (IPEMC 2024-ECCE Asia), Chengdu, China, [Proceedings, pp. 1-5], 2024.5D
  • Digital Active Gate Driving Automatically Minimizing Switching Loss While Keeping Surge Current Below User-Specified Target:T. Inuma, D. Zhang, K. Hata, K. Mikami, K. Hatori, K. Tanaka, W. Saito, and M. Takamiya・IEEE 10th International Power Electronics and Motion Control Conference-ECCE Asia (IPEMC 2024-ECCE Asia), Chengdu, China, [Proceedings, pp. 1-6], 2024.5D
  • Digitalization of Future Grid:M. Takamiya and H. Ohashi・European Center for Power Electronics (ECPE) Workshop: Sustainable Energy Supply to Reach Net-Zero CO2 Emissions by 2050, Darmstadt, Germany, 2024.9D
  • Natural Active Gate Driving for Breaking Trade-off Between Switching Loss and Current Overshoot Using Ordinary Gate Driver:Y. Liang, H. Zhou, D. Zhang, K. Hata, and M. Takamiya・IEEE Energy Conversion Congress & Exposition (ECCE), Phoenix, USA, [Proceedings, pp. 1-6], 2024.10D
  • High Pulse Current IGBT Power Module for MRM Drive:H. Shiotsu, B. Battuvshin, D. He, K. Wada, M. Takamiya, K. Akatsu, and I. Omura・International Conference on Electrical Machines and Systems (ICEMS), Fukuoka, Japan, [Proceedings, pp. 1-4], 2024.11D
  • A Novel Magnet Reversal Motor (MRM) Driven by High Pulse Current for Copper Loss Reduction:K. Akatsu, Y. Okajima, K. Wada, I. Omura, and M. Takamiya・International Conference on Electrical Machines and Systems (ICEMS), Fukuoka, Japan, [Proceedings, pp. 1-4], 2024.11D
  • High Pulse and Sinusoidal Current Output Inverter for MRM Drive:K. Yamashita, K. Wada, M. Takamiya, I. Omura, and K. Akatsu・International Conference on Electrical Machines and Systems (ICEMS), Fukuoka, Japan, [Proceedings, pp. 1-4], 2024.11D
  • Gate Driver IC With Fully Integrated Overcurrent Protection for Driving Magnet Reversal Motor With High Pulse Current:Y. Sukita, H. Zhang, D. Zhang, K. Hata, K. Wada, K. Akatsu, I. Omura, and M. Takamiya・International Conference on Electrical Machines and Systems (ICEMS), Fukuoka, Japan, [Proceedings, pp. 1-5], 2024.11D
  • Method for Determining Optimum Time in Time-Domain Stop-and-Go Active Gate Driving:Y. Sukita, K. Hata, K. Morokuma, Y. Wada, Y. Yamaoka, Y. Mukunoki, and M. Takamiya・IEEE Southern Power Electronics Conference (SPEC), Brisbane, Australia, [Conference Paper, pp. 1-7], 2024.12D
  • Fully Integrated Closed-Loop Active Gate Driver IC With Real-Time Control of Gate Current Change Timing by Gate Current Sensing:Y. Liang, K. Hata, and M. Takamiya・IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, USA, [Proceedings, pp. 1084-1089], 2025.3D
  • Demonstration of Efficiency Increase of 350 V-to-13.3 V Isolated DC-DC Converters for Electric Vehicles by Active Gate Driving:Y. Sukita, K. Hata, H. Kondo, K. Watanabe, K. Nagayoshi, and M. Takamiya・IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, USA, [Proceedings, pp. 1102-1107], 2025.3D
  • High Temperature Operation of Digital Gate Driver Integrated into a Power Module:K. Saiga, S. Zaizen, S. Nakano, S. Kusunoki, K. Watabe, K. Hata, M. Takamiya, S. Nishizawa, and W. Saito・IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, USA, [Proceedings, pp. 2551-2555], 2025.3D
  • パワーエレクトロニクスにおけるノイズと損失の問題をソフトウエアで解決するデジタルゲートドライバ技術 (基調講演):高宮 真・パワーエレクトロニクス学会 第252回定例研究会, 大阪, 2024.4E
  • 電源システムをパワー半導体レベルでDX化する「デジタルゲートドライバ技術」 (基調講演):高宮 真・EDN Japan 電源設計・開発セミナー2024 春~DX/GXを支える電源技術の最前線~, オンライン, 2024.5E
  • Fully Integrated Bond Wire Lift-off Sensor Circuits for Reliable Power Electronic Systems:Y. Liang, H. Yano, H. Zhou, K. Hata, and M. Takamiya・電子情報通信学会, LSIとシステムのワークショップ, ポスターセッション 一般部門, 東京, 2024.5E
  • パワー半導体を賢く操るデジタルアクティブゲート駆動技術とゲート端子経由のセンシング技術 (招待講演):高宮 真・パワエレアカデミー 第37回パワーエレクトロニクスセミナー, 横浜, 2024.8E
  • 3.6 kV, 2000 A Demonstration of Natural Active Gate Driving With 6.5 kV IGBTs:Y. Liang, K. Mikami, T. Takamori, H. Zhou, K. Hata, W. Saito, and M. Takamiya・電気学会 産業応用部門大会, 水戸, [予稿集, 1-62], 2024.8E
  • スイッチング波形の機械学習を用いたパワーサイクル劣化検出における測定回路と波形組合せの効果:出井和音, Mamee Thatree, Lutzen Hauke, Kaminski Nando, 畑 勝裕, 高宮 真, 西澤伸一, 齋藤 渉・電気学会, 電子デバイス・半導体電力変換合同研究会, 日立, [予稿集, SPC-24-188], 2024.11E
  • デジタルゲートドライバを集積したパワーモジュールの高温動作:雑賀一真, 財前昌平, 中野 智, 楠 茂, 渡部毅代登, 畑 勝裕, 高宮 真, 西澤伸一, 齋藤 渉・電気学会, 電子デバイス・半導体電力変換合同研究会, 日立, [予稿集, SPC-24-189], 2024.11E
  • 時間領域Stop-and-Goアクティブゲート駆動における最適時間の決定手法:鋤田陽平, 畑 勝裕, 諸熊健一, 和田幸彦, 山岡祐太, 椋木康滋, 高宮 真・電子情報通信学会, ICD/CAS学生・若手研究会, 石垣島, 2024.12E
  • スイッチング損失とゲートドライブ損失を削減する共振アクティブゲート駆動回路の提案:福永博生, 矢野広気, 畑 勝裕, 井出倫滉, 渡辺健一, 永吉謙一, 高宮 真・電気学会全国大会, 東京, [予稿集, 4-109], 2025.3E
  • NEDO, 東大がパワー半導体のスイッチング損失を自動低減するゲート駆動ICチップの適用範囲を約5倍に拡大:日本経済新聞, 2025.3.17G
  • パワー半導体のスイッチング損失を3割削減できるゲート駆動回路, 適用範囲が5倍に:ITmedia, 2025.3.17G
  • 東大 生研, パワー半導体スイッチング損失低減技術の適用範囲を約5倍に拡大:TECH+, 2025.3.17G
  • Anisotropy reversal of thermal conductivity in silicon nanowire networks driven by quasi-ballistic phonon transport:B. Kim, F. Barbier-Chebbah, Y. Ogawara, L. Jalabert, R. Yanagisawa, R. Anufriev, and M. Nomura・ACS Nano, 18, 10557, doi: 10.1021/acsnano.3c12767, 2024.4C
  • フォノンエンジニアリング:ナノ構造を駆使した熱制御による省エネと創エネ:野村政宏・応用物理学会 特別webコラム2: グリーントランスフォーメーションに挑む応用物理, 2024.4C
  • Enhanced far-field thermal radiation through a polaritonic waveguide:S. Tachikawa, J. Ordonez-Miranda, L. Jalabert, Y. Wu, R. Anufriev, Y. Guo, B. Kim, H. Fujita, S. Volz, and M. Nomura・Phys. Rev. Lett., 132, 186904, doi: 10.1103/PhysRevLett.132.186904, 2024.5C
  • ユビキタスフォノンエンジニアリング:ナノスケールでのフォノン熱輸送の理解と制御が開く応用:野村 政宏・応用物理, 93, 272, 272-278, doi: 10.11470/oubutsu.93.5_272, 2024.5C
  • Ubiquitous phonon engineering: Thermal phonon transport at the nanoscale:M. Nomura・JSAP Rev., 240210, doi: 10.11470/jsaprev.240210, 2024.6C
  • High-power-density hybrid planar-type silicon thermoelectric generator with phononic nanostructures:R. Yanagisawa, S. Koike, T. Nawae, N. Tsujii, Y. Wang, T. Mori, P. Ruther, O. Paul, Y. Yoshida, J. Harashima, T. Kinumura, Y. Inada, and M. Nomura・Mater. Today Phys., 45, 101452, doi: 10.1016/j.mtphys.2024.101452, 2024.6C
  • Tailoring Phonon Dispersion of Genetically Designed Nanophononic Metasurface:M. Diego, M. Pirro, B. Kim, R. Anufriev and M. Nomura・ACS Nano, 18, 18307, doi: 10.1021/acsnano.4c01954, 2024.7C
  • Isotope interface engineering for thermal transport suppression in cryogenic graphene:X. Wu, Y. Wu, X. Huang, Z. Fan, S. Volz, Q. Han, and M. Nomura・Mater. Today Phys., 46, 101500, doi: 10.1016/j.mtphys.2024.101500, 2024.7C
  • Phonon matching in a piezoelectrically driven diamond hybrid phononic nanocavity for quantum applications:M. Diego, B. Kim, M. Pirro, and M. Nomura・Phys. Rev. Appl., 21, 064064, doi: 10.1103/PhysRevApplied.21.064064, 2024.7C
  • Dimensional crossover in thermal radiation: From three- to two-dimensional heat transfer between metallic membranes:J. Ordonez-Miranda, R. Anufriev, M. Nomura, and S. Volz・Phys. Rev. Appl., 22, L031006, doi: 10.1103/PhysRevApplied.22.L031006, 2024.9C
  • A graphite thermal Tesla valve driven by hydrodynamic phonon transport:X. Huang, R. Anufriev, L. Jalabert, K. Watanabe, T. Taniguchi, Y. Guo, Y. Ni, S. Volz, and M. Nomura・Nature, 634, 1086, doi: 10.1038/s41586-024-08052-1, 2024.10C
  • Phonon dispersion of nanoscale honeycomb phononic crystal: gigahertz and terahertz spectroscopy comparison:M. Diego, R. Anufriev, R. Yanagisawa, and M. Nomura・Eur. Phys. J. Plus, 139:1032, doi: 10.1140/epjp/s13360-024-05841-5, 2024.11C
  • Silicon-via (Si-via) hole metrology and inspection by grayfield edge diffractometry:K. Lu, B. Kim, M. Nomura, J. Park, C. Lee・J. Manuf. Process, 133, 503, doi: 10.1016/j.jmapro.2024.11.086, 2024.11C
  • Far-field thermal radiation driven by the temperature oscillations of macroscopic bodies:J. Ordonez-Miranda, Y. Wu, M. Nomura, and S. Volz・Phys. Rev. Appl., 22, 054053, doi: 10.1103/PhysRevApplied.22.054053, 2024.11C
  • Mathematically inspired structure design in nanoscale thermal transport:X. Wu, and M. Nomura・Nanoscale, 17, 3003, doi: 10.1039/D4NR04385E, 2024.12C
  • Focusing surface phonon-polaritons for tunable thermal radiation:J. Ordonez-Miranda, M. Nomura, and S. Volz・Discover Nano, 20, 15, doi: 10.1186/s11671-025-04191-0, 2025.1C
  • The 2024 phononic crystals roadmap:Y. Jin, M. Nomura, et al.・Journal of Physics D: Applied Physics, 58 113001, doi: 10.1088/1361-6463/ad9ab2, 2025.1C
  • Des phonons à sens unique:X. Huang et al.・Pour la Science, 567, 14, https://www.pourlascience.fr/sd/medecine/pour-la-science-n567-27158.php, 2025.1C
  • Phonon coherence and minimum thermal conductivity in disordered superlattices:X. Wu, Z. Wu, T. Liang, Z. Fan, J. Xu, M. Nomura, and P. Ying・Phys. Rev. B, 111, 085413, doi: 10.1103/PhysRevB.111.085413, 2025.2C
  • 2D Far-Field Thermal Radiation Driven by Surface Polaritons:J. Ordonez-Miranda, R. Anuvriev, M. Nomura, and S. Volz・PIERS, 2024.4D
  • Tunable THz Transmittance of Silicon Nanofilms by Graphene Plasmon Polaritons:Y. Wu, Y. Kosevich, J. Ordonez-Miranda, K. Hirakawa, S. Volz , M. Nomura・PIERS, 2024.4D
  • Guided Polariton Thermal Radiation:S. Volz, J. Ordonez, Y. Wu, R. Anufriev, S. Tachikawa, L. Jalabert, M. Nomura・MRS Spring Meeting 2024, 2024.4D
  • Long-range, Short-wavelength, and Ultrafast Heat Conduction Driven by Three Plasmon Modes Supported by Graphene:J. Ordonez-Miranda, Y. Kosevich, M. Nomura, and S. Volz・MRS Spring Meeting 2024, 2024.4D
  • Si-Based Planar-Type Thermoelectric Generators over 1 μWcm-2K-2 (Invited):M. Nomura・MRS Spring Meeting 2024, 2024.4D
  • Energy Harvesting from the Environment Temperature Fluctuations:J. Ordonez-Miranda, R. Anuvriev, M. Nomura, and S. Volz・International Scientific Meeting ECI, 2024.5D
  • 100 uW energy harvesting with phonon engineered planar-type Si thermoelectric generator:R. Yanagisawa, P. Ruther, and O. Paul, and M. Nomura・Nanoscale and Microscale Heat Transfer VIII, 2024.6D
  • Phonon Polariton `Low-Dimensional' Thermal Radiation:S. Volz, J. Ordonez, Y. Wu, R. Anufriev, S. Tachikawa, L. Jalabert, M. Nomura・Nanoscale and Microscale Heat Transfer VIII, 2024.6D
  • Quantum of Far-Field Thermal Radiation between Subwavelength Films:J. Ordonez-Miranda, R. Anuvriev, M. Nomura, and S. Volz・Nanoscale and Microscale Heat Transfer VIII, 2024.6D
  • Phonon hydrodynamics induced thermal rectification in microsolid graphite Tesla valves:X. Huang, R. Anufriev, L. Jalabert, K. Watanabe, T. Taniguchi, Y. Guo, Y. Ni, S. Volz and M. Nomura・Nanoscale and Microscale Heat Transfer VIII, 2024.6D
  • Diamond optomechanical crystals for coherent quantum transduction:B. Kim, H. Kurokawa, K. Sakai, K. Koshino, H. Kosaka, and M. Nomura・Nanoscale and Microscale Heat Transfer VIII, 2024.6D
  • High thermal conductivity AlN films for advanced 3D Chiplets:T. Takagi, T. Ninomiya, M. Niwa, S. Obar, T. Momose, Y. Shimogaki, M. Nomura, H. Fujioka, M. Mori, and T. Kuroda・2024 IEEE Symposium on VLSI Technology & Circuits, 2024.6D
  • Net Heat Current at Zero Mean Temperature Gradient:J. Ordonez-Miranda, R. Anuvriev, M. Nomura, and S. Volz・The 3rd Asian Conference on Thermal Sciences, 2024.6D
  • Planar-Type SiGe Thermoelectric Generator with a Double Cavity Structure:S. Koike, R. Yanagisawa, L. Jalabert, R. Anufriev, M. Kurosawa, T. Mori, and M. Nomura・The 3rd Asian Conference on Thermal Sciences, 2024.6D
  • Heat Transfer in Nanostructured Semiconductors: A Photonic Perspective (Keynote):M. Nomura・The 3rd Asian Conference on Thermal Sciences, 2024.6D
  • Thermal conductivity control by semiconductor nanostructures and silicon thermoelectric applications (Invited):M. Nomura・Next-Generation Electronic Materials & Advanced Thermal Management Technologies, 2024.6D
  • Planar-type Silicon Energy Harvester with Thermal Switch Structure:R. Yanagisawa, M. Nomura・40th International Conference on Thermoelectrics, 2024.7D
  • Planar-type nanostructured Si thermoelectric energy harvester (Invited):M. Nomura・GDR NAME, 2024.7D
  • Harnessing Thermal Waves for Heat Pumping:J. Ordonez-Miranda, R. Anuvriev, M. Nomura, and S. Volz・ICPPP, 2024.7D
  • Isotope interface engineering for effective suppression of thermal transport in cryogenic graphene:X. Wu, Z. Fan, S. Volz, Q. Han, and M. Nomura・The 1st GPUMD&NEP Workshop, 2024.7D
  • Thermal rectification in graphite Tesla valve based on phonon hydrodynamics (Invited):X. Huang and M. Nomura・The 14th international conference series on Metamaterials, Photonic Crystals and Plasmonics, 2024.7D
  • Enhanced thermal conduction and radiation by surface phonon polaritons (Plenary):M. Nomura・NanoRad2024, 2024.7D
  • Phonon-Polariton Thermal Waves:J. Ordonez-Miranda, M. Nomura, and S. Volz・22nd Symposium on Thermophysical Properties, 2024.7D
  • Phonon hydrodynamics in graphite and thermal rectification (Invited):M. Nomura・The 32nd International Materials Research Congress, 2024.8D
  • 2D Far-Field Thermal Radiation Driven by Surface Polaritons:J. Ordonez-Miranda, R. Anuvriev, M. Nomura, and S. Volz・The 32nd International Materials Research Congress, 2024.8D
  • Si-based Planar Thermoelectric Generator:R. Yanagisawa and M. Nomura・8th International Conference on Advnced Composite Materials, 2024.8D
  • Reduction of Thermal Conductivity in Silicon Thin Film by Super-lattice Interface and Phononic Crystal Nanostructures:S. Koike, R. Yanagisawa, T. Inoue, K. Sawano, and M. Nomura・International Conference on Solid State Devices and Materials 2024, 2024.9D
  • Stabilization of Liquid-Vapor Two-Phase Flow Boiling in Microchannel by Manifold with Flow Diode Structure for Advanced Thermal Management:H. Shi, P. Bruand, R. Yanagisawa, L. Jalabert, S. H. Kim, and M. Nomura・International Conference on Solid State Devices and Materials 2024, 2024.9D
  • Extending the concept of the Tesla valve to thermal conduction (Invited):M. Nomura・The 9th Workshop on Physics between Ecole Normale Superieure and University of Tokyo, 2024.12D
  • From Nano to Field: Case of thermoelectric energy harvester (Invited):M. Nomura・The 1st Taiwan-Japan Global Partnership Semiconductor and Innovation Startup Forum, 2024.12D
  • Phonon engineering for thermal management of advanced semiconductor devices (Invited):M. Nomura・Intel-UTokyo Joint Symposium, 2024.12D
  • Integration and characterization of high thermal conductivity materials for heat dissipation in stacked devices:W.-Y. Woon, J.-H. Jhang, K.-K. Hu, C.-C. Shih, J.-F. Hsu, J.-P. Lin, Y. Wu, A. Kasperovich, M. Malakoutian, R. Soman, J. Kim , H.-K. Wei, M. Nomura, S. Chowdhury, and S. Sandy Liao・2024 IEEE Symposium on VLSI Technology & Circuits, 2024D
  • Hydrodynamic Phonon Transport and Thermal Rectification in Graphite Microstructures:X. Huang, Y. Guo, R. Anufriev, L. Jalabert, K. Watanabe, T. Taniguchi, Y. Ni, S. Volz and M. Nomura・The 1st A3 Nano & Thermal Energy Engineering Workshop, 2025.1D
  • Nanoscale thermal transport inspired by mathematical structure design:X. Wu, X. Huang, Y. Wu, Z. Fan, S. Volz, Q. Han, and M. Nomura・The 1st A3 Nano & Thermal Energy Engineering Workshop, 2025.1D
  • Si-based planar-type thermoelectric generators:R. Yanagisawa, S. Koike, and M. Nomura・The 1st A3 Nano & Thermal Energy Engineering Workshop, 2025.1D
  • Temperature-dependent Anisotropic Thermal Conductivity in Silicon Nanowire Networks:B. Kim, F. Barbier-Chebbah, Y. Ogawara, L. Jalabert, R. Yanagisawa, R. Anufriev, and M. Nomura・The 1st A3 Nano & Thermal Energy Engineering Workshop, 2025.1D
  • Thermally functional devices based on phonon engineering (Invited):M. Nomura・The 1st A3 Nano & Thermal Energy Engineering Workshop, 2025.1D
  • Graphite thermal Tesla valve (Plenary):M. Nomura・The 68th Fullerenes-Nanotubes-Graphene General Symposium, 2025.3D
  • Experimental investigation of thermal conduction in Si/AlN interface:Y. Wu, J. Ordonez-Miranda, W. Wang, L. Jalabert S. Volz, and M. Nomura・第8回フォノンエンジニアリング研究会, 2024.5E
  • Thermal rectification in graphite using phonon hydrodynamics:X. Huang, R. Anufriev, L. Jalabert, K. Watanabe, T. Taniguchi, Y. Guo, Y. Ni, S. Volz and M. Nomura・第8回フォノンエンジニアリング研究会, 2024.5E
  • 2D thermal radiation driven by surface phonon-polaritons (招待講演):J. Ordonez-Miranda, R. Anuvriev, M. Nomura, and S. Volz・第8回フォノンエンジニアリング研究会, 2024.5E
  • Atomistic insights into phonon and thermal transport in nanoscale gradient AlxGa1-xN interface:W. Wang, Y. Wu, S. Volz, and M. Nomura・第8回フォノンエンジニアリング研究会, 2024.5E
  • Enhancing cryogenic thermal management of graphene through Golomb ruler-designed isotope interfaces:X. Wu, Y. Wu, X. Huang, Z. Fan, S. Volz, Q. Han and M. Nomura・第8回フォノンエンジニアリング研究会, 2024.5E
  • Machine learning-assisted phonon impeding in Si/Ge nanowires with disordered checkerboard pattern due to Anderson localization:X. Huang, S. Volz, M. Nomura, and Y. Ni・第8回フォノンエンジニアリング研究会, 2024.5E
  • Tailoring phonon dispersion in inversely designed phononic crystal:M. Diego, M. Pirro, B. Kim, R. Anufriev, and M. Nomura・第8回フォノンエンジニアリング研究会, 2024.5E
  • Thermal phonon engineering: Photonic perspective:野村 政宏・第8回フォノンエンジニアリング研究会, 2024.5E
  • Two-phase flow boiling in manifold microchannel for efficient electronics near-junction cooling:H. Shi, S. Grall, R. Yanagisawa, L. Jalabert, S. H. Kim and M. Nomura・第8回フォノンエンジニアリング研究会, 2024.5E
  • オプトメカニカルインタフェースを介したマイクロ波ーオプティカル量子変換:キム ビョンギ, M. Diego, M. Pirro, 野村 政宏・第8回フォノンエンジニアリング研究会, 2024.5E
  • 熱スイッチ機構を用いたシリコン熱電ハーベスタの設計:柳澤 亮人, 野村 政宏・第8回フォノンエンジニアリング研究会, 2024.5E
  • 微小熱源の利用に向けた平面型シリコン熱電ハーベスタの開発 (招待講演):柳澤亮人, 野村政宏・第29回日本熱電学会研究会, 2024.5E
  • 先端 3D Chiplet に向けた高熱伝導率AlN膜の研究:高木 剛, 二宮 健生, 丹羽 正昭, 小原 聡顕, 百瀬 健, 霜垣 幸浩, 野村 政宏, 藤岡 洋, 森 正和, 黒田 忠広・第252回応用物理学会シリコンテクノロジー分科会研究会, 2024.8E
  • SiGe界面と短周期フォノニック結晶ナノ構造によるSi薄膜のσ/κ比の向上:柳澤 亮人, 小田島 綾華, 井上 貴裕, 澤野 憲太郎, 野村 政宏・第85回応用物理学会秋季学術講演会, 2024.9E
  • Automated tailoring of the phonon dispersion for highly anisotropic phononic crystal:M. Diego, M. Pirro, B. Kim, R. Anufriev, and M. Nomura・第85回応用物理学会秋季学術講演会, 2024.9E
  • Optimizing cryogenic graphene: how Golomb ruler-designed isotope interfaces suppress thermal transport:X. Wu, Z. Fan, S. Volz, Q. Han, and M. Nomura・第85回応用物理学会秋季学術講演会, 2024.9E
  • SiGe 平面型熱電素子の作製と性能評価:小池 壮太, 柳澤 亮人, 黒澤 昌志, 森 孝雄, 野村 政宏・日本機械学会 熱工学コンファレンス2024, 2024.10E
  • 高熱伝導率を有するAlN膜の研究と先端3D Chipletへの応用 (招待講演):高木 剛, 二宮 健生, 丹羽 正昭, 小原 聡顕, 百瀬 健, 霜垣 幸浩, 野村 政宏, 藤岡 洋, 森 正和, 黒田 忠広・電子情報通信学会シリコン材料・デバイス研究会, 2024.11E
  • フォトニクスの視点からみる半導体ナノ構造の熱伝導 (招待講演):野村政宏・東京都市大学 第225回総研セミナー, 2024.11E
  • フォノンエンジニアリングに立脚した熱機能デバイス (招待講演):野村政宏・第2回セイコーインスツル新世代研究財団コンファレンス, 2024.11E
  • ナノ構造化シリコン薄膜を用いた熱電発電素子開発と屋外実験 (招待講演):野村政宏・第58回排熱発電コンソーシアム, 2024.11E
  • Designing advanced nanophononic devices through genetic algorithm (招待講演):M. Diego, M. Pirro, B. Kim, R. Anufriev and M. Nomura・第72回応用物理学会春季学術講演会, 2025.3E
  • フォノニックナノ構造を用いた高出力平面型シリコン熱電発電素子 (招待講演):柳澤 亮人, 野村 政宏・第72回応用物理学会春季学術講演会, 2025.3E
  • 量子光電融合を担うマイクロ波―光量子インターフェース:黒川 穂高, Diego Michele, キム ビョンギ, 野村 政宏, 他・第72回応用物理学会春季学術講演会, 2025.3E
  • Atomic Insight for Regulation of Interfacial Thermal Transport Between Si and AlN via Machine Learning Potential:W. Wang, Y. Wu, S. Volz, M. Nomura・第72回応用物理学会春季学術講演会, 2025.3E
  • Enhanced thermoreflectance coefficient using graphene layers on SiO2/Si:W.-C. Lin, Y. Wu, Y. Ogawara, B. Kim, S. Ito, and M. Nomura・第72回応用物理学会春季学術講演会, 2025.3E
  • SiGe超薄膜界面層によるSi薄膜の熱伝導率低減:小田島 綾華, 柳澤 亮人, 澤野 憲太郎, 野村 政宏・第72回応用物理学会春季学術講演会, 2025.3E
  • フェムト秒レーザ誘起周期構造を用いたシリコン薄膜の熱伝導率制御:キム ビョンギ, 半間 大基, 伏信 一慶, 野村 政宏・第72回応用物理学会春季学術講演会, 2025.3E
  • 時間領域サーモリフレクタンス法を用いたフィラーの熱伝導率測定法の開発:伊藤 蒼太朗, キム ビョンギ, 柳澤 亮人, J. Laurent, I. Hafsa, 野村 政宏・第72回応用物理学会春季学術講演会, 2025.3E
  • 高効率量子変換を目指したダイヤモンドオプトメカニカル共振器系の開発 (招待講演):野村 政宏・第72回応用物理学会春季学術講演会, 2025.3E
  • Observation and application of hydrodynamic heat transport in microscale graphite (招待講演):X. Huang and M. Nomura・第72回応用物理学会春季学術講演会, 2025.3E
  • Overcoming the intrinsic brittleness of high-strength Al2O3-GdAlO3 ceramics through refined eutectic microstructure:Yuta Aoki, Hiroshi Masuda, Eita Tochigi, Hidehiro Yoshida・Nature Communications, 15, 8700, doi: 10.1038/s41467-024-53026-6, 2024.10C
  • Atomic-scale observations of dislocation junction formation and decomposition processes in gold:Mingen Sou, Shun Kondo, Takaaki Sato, Eita Tochigi, Naoya Shibata, Yuichi Ikuhara・Scripta Materialia, 258, 116505, doi: 10.1016/j.scriptamat.2024.116505, 2024.12C
  • Atomic scale observations of notch tips under tensile stress (Invited):Eita Tochigi・TimeMan 2024, Antwerpen, Belgium, 2024.9D
  • Atomic scale characterization of deformation and fracture phenomena using a MEMS-based in situ STEM loading system:Eita Tochigi, Takkaki Sato, Minjian Sou, Naoya Shibata, Yuichi Ikuhara・ECI: Nanomechanical Testing in Materials Research and Development IX, Sicily, Italy, 2024.10D
  • Methodology of atomic resolution in situ straining testing and application studies:Eita Tochigi, Takaaki Sato, Minjian Sou, Naoya Shibata, Yuichi Ikuhara・APCFS 2024, Matsue, Shimane, Japan, 2024.11D
  • STEM内その場荷重負荷試験による刃状転位の上昇運動速度の計測:栃木 栄太, 佐藤 隆昭, 曹 旻鑒, 柴田 直哉, 幾原 雄一・日本顕微鏡学会第80回学術講演会, 幕張メッセ, 千葉県, 2024.6E
  • 原子レベルその場荷重負荷試験による変形・破壊現象の素過程の解析 (招待講演):栃木 栄太・東京都市大学サロン, 東京都市大学世田谷キャンパス, 2024.10E
  • 結晶性材料における力学応答の原子レベル観察とシミュレーションへの期待 (担当講演):栃木 栄太・革新的シミュレーション研究センター ワークショップ:力学の再構築, 東京大学 生産技術研究所, 2025.1E
  • MEMSデバイスを用いたTEM内その場荷重負荷試験システムの概要と応用研究 (招待講演):栃木 栄太・第三回 微小力学 懇話会, 東京都中央区, 2025.3E