Publications

  1. "Annealing Behavior of Spin Density in UHV Evaporated Amorphous Silicon" ;
    T. Yonehara, T. Saito, H. Kawarada, T. Hirata, M. Kakumu and I. Ohdomari, Physics Letters 78A, 192 (1980).

  2. "A Structural Model for the Interface between Amorphous and (100) Crystalline Silicon";
    T. Saito and I. Ohdomari, Philosophical Magazine B43, 673 (1981).

  3. "Solid Phase Epitaxial Growth of Vacuum Deposited Amorphous Silicon";
    I. Ohdomari, M. Kakumu, T. Saito and T. Yonehara, Hyomen-Kagaku 2, 136 (1981). [in Japanese]

  4. "Electron Paramagnetic Resonance Study on the Annealing Behavior of Vacuum Deposited Amorphous Silicon on Crystalline Silicon";
    I. Ohdomari, M. Kakumu, H. Sugahara, M. Hori, T. Saito, T. Yonehara and Y. Hajimoto, J. Appl. Phys. 52, 6617 (1981).

  5. "Distortion Energy Distributions in the Random Network Model of Amorphous Silicon";
    T. Saito, T. Karasawa and I. Ohdomari, J. Non-Cryst. Solids 50, 271 (1982).

  6. "Quantitative Analysis of Bond Rearrangement Process during Solid Phase Epitaxy of Amorphous Silicon";
    T. Saito and I. Ohdomari, Philosophical Magazine B49, 471 (1984).

  7. "Analysis of the Si-on-Insulator Structure by Modeling of the Interface Atomic Arrangement";
    T. Saito, Y. Yamakoshi and I. Ohdomari, Mat. Res. Soc. Symp. Proc. Vol.25 (1984) p.531.

  8. "Modeling of Interface Atomic Arrangement for Analysis of Solid Phase Epitaxy and Si-on-Insulator Structure";
    T. Saito and I. Ohdomari, in "Silicon-on-Insulator: Its Technology and Applications" ed. by S. Furukawa (KTK Science Publishers, Tokyo, 1985) p.171.

  9. "Rapid Thermal Annealing of Si+ Implanted GaAs in the Presence of Arsenic Pressure by GaAs Powder";
    T. Hiramoto, T. Saito and T. Ikoma, Jpn. J. Appl. Phys. 24, L193 (1985).

  10. "The Role of Gallium Antisite Defect in Activation and Type-Conversion in Si Implanted GaAs";
    T. Hiramoto, Y. Mochizuki, T. Saito and T. Ikoma, Jpn. J. Appl. Phys. 24, L921 (1985).

  11. "Submicron Processing of III-V Semiconductors by Focused Ion Beam Technology";
    T. Hiramoto, T. Odagiri, P. Oldiges, T. Saito and T. Ikoma, in Proc. of Int. Symp. GaAs and Related Compounds, Las Vegas, Nevada, 1986, (Inst. Phys. Conf. Ser. No.83, p.295).

  12. "Direct Experimental Estimation of Interface Dipole Effect of GaAs/AlAs Heterojunction Band Offset by X-ray Photoelectron Spectroscopy";
    K. Hirakawa, Y. Hashimoto, T. Saito and T. Ikoma, in Proc. of Int. Symp. GaAs and Related Compounds, Karuizawa, Japan, 1989, (Inst. Phys. Conf. Ser. No.106, p.345).

  13. "Effect of Stacking Sequence on Valence Bands in Ga/As/Ge (001) Monolayer Superlattices";
    T. Saito and T. Ikoma, Appl. Phys. Lett. 55, 1300 (1989).

  14. "Relation between Band Gap Shrinkage and Overlap of Interface States in Polar (GaAs)n/(Ge2)n [001] Superlattice";
    T. Saito and T. Ikoma, Superlattices and Microstructures 9, 377 (1991).

  15. "Role of Interface States in Band Structures of Short-Period (GaAs)n/(Ge2)n [001] Superlattices under a Zero-Field Model";
    T. Saito and T. Ikoma, Physical Review B 45, 1762 (1992).

  16. "Impurity-Related Bands in GaAs Doped with Ge, Zn, and Se Monolayers";
    T. Saito and T. Ikoma, Surface Science 267, 57 (1992).

  17. "Self-Consistent Tight-Binding Calculations of Band Discontinuity in GaAs/AlAs Superlattices Controlled by Group-IV-Element Insertion Layers";
    T. Saito and T. Ikoma, Superlattices and Microstructures 12, 81 (1992).

  18. "Role of ultrathin Si layers inserted at GaAs/AlAs heterointerfaces";
    Y. Hashimoto, T. Saito, K. Hirakawa, and T. Ikoma, in Proc. of Int. Symp. GaAs and Related Compounds, Karuizawa, Japan, 1992, (Inst. Phys. Conf. Ser., No.129, p.259).

  19. "Band Discontinuity and Effects of Si-Insertion Layer at (311)A GaAs/AlAs Interface";
    T. Saito, Y. Hashimoto, and T. Ikoma, Solid-State Electronics 37, 743 (1994).

  20. "Determination and artificial control of heterojunction band discontinuities";
    Y. Hashimoto, T. Saito, and T. Ikoma, Oyo Buturi 63, 116 (1994). [in Japanese]

  21. "Band Discontinuity in GaAs/AlAs Superlattices with InAs Strained Insertion-Layers";
    T. Saito, Y. Hashimoto, and T. Ikoma, Superlattices and Microstructures 15, 405 (1994).

  22. "Band Discontinuity at the (311)A GaAs/AlAs Interface and Possibility of Its Control by Si Insertion Layers";
    T. Saito, Y. Hashimoto, and T. Ikoma, Physical Review B 50, 17242 (1994).

  23. "Artificial control of heterojunction band discontinuities by two delta dopings";
    Y. Hashimoto, N. Sakamoto, K. Agawa, T. Saito, and T. Ikoma, in Proc. of Int. Symp. on Compound Semiconductors, San Diego, USA, 1994, (Inst. Phys. Conf. Ser., No. 141, p.149).

  24. "Effects of ZnSe and P Insertion Layers on Band Offsets at (100) GaAs/AlAs Interfaces";
    T. Saito and T. Ikoma, Applied Surface Science 107, 222 (1996).

  25. "Possibility of Band-Discontinuity Control at (100) GaAs/AlAs Interfaces by ZnSe Insertion Layers";
    T. Saito, Transactions of the Materials Research Society of Japan, Vol. 20, p. 739 (1996).

  26. "Band Discontinuities at the (100) GaAs/AlAs Interfaces with In- and P-Insertion Layers: Effects of Isoelectronic Impurity Layers";
    T. Saito, Y. Hashimoto, and T. Ikoma, Solid State Communications 101, 1 (1997).

  27. "Control of band discontinuities at (100) GaAs/AlAs interfaces by ZnSe insertion layers: Comparison with Si insertion layers";
    T. Saito, Physical Review B 56, 14933 (1997).

  28. "Strain distribution and electronic structure of InAs quantum dots on GaAs: Atomic scale calculations";
    T. Saito, J. N. Schulman, and Y. Arakawa, Physics of Low-Dimensional Structures 11/12, 19 (1997).

  29. "Atomic Scale Calculations for Strain Distribution and Electronic Structure of InAs Pyramidal Quantum Dots on (100) GaAs";
    T. Saito, J. N. Schulman, and Y. Arakawa, Proc. of 24th Int. Symp. on Compound Semiconductors, San Diego, USA, 1997 (IEEE, 97TH8272, p.643).

  30. "Electronic structure of (311)-InAs monolayers embedded in GaAs";
    T. Saito, Superlattices and Microstructures 23, 219 (1998).

  31. "Strain-energy distribution and electronic structure of InAs pyramidal quantum dots with uncovered surfaces: Tight-binding analysis";
    T. Saito, J. N. Schulman, and Y. Arakawa, Physical Review B 57, 13016 (1998).

  32. "Atomic Structure and Strain in InGaN Alloy Calculated Using a Valence-Force-Field Method";
    T. Saito and Y. Arakawa, Proc. of 2nd Int. Symp. on Blue Laser and Light Emitting Diodes, Chiba, Japan, 1998 (Ohmsha, p.292).

  33. "Strain Energy Distribution in GaN and InGaN Quantum Dots on AlN Buffer Layers: A Valence-force-field Approach";
    T. Saito and Y. Arakawa, Proc. of 25th Int. Symp. on Compound Semiconductors, Nara, Japan, 1998 (Inst. Phys. Conf. Ser. No.162, p.741).

  34. "Atomic structure and phase stability of InxGa1-xN random alloys calculated using a valence-force-field method";
    T. Saito and Y. Arakawa, Physical Review B 60, 1701 (1999).

  35. "Formation of InGaN Quantum Dots: MOCVD Growth and Electronic Structures";
    T. Saito, T. Someya, K. Tachibana, S. Ishida, O. Moriwaki, and Y. Arakawa, Proc. of 3rd SANKEN Int. Symp. on Advanced Nanoelectronics: Devices, Materials, and Computing, Osaka, Japan, 2000 (Memoirs of The Institute of Scientific and Industrial Research, Osaka University, Special Issue, Vol.57, p.167).

  36. "Quantum confined electronic states in InGaN dots embedded in GaN: Tight-binding calculation";
    T. Saito and Y. Arakawa, Proc. of 27th Int. Symp. on Compound Semiconductors, Monterey, California, 2000 (IEEE, 00TH8498, p.285).

  37. "Effects of internal piezoelectric field on electronic states of InGaN quantum dots grown on GaN";
    T. Saito and Y. Arakawa, J. of Crystal Growth 237-239, 1172 (2002).

  38. "Quantum-Confined Stark Effect in InGaN Pyramidal Dots Induced by the Piezoelectric Field";
    T. Saito and Y. Arakawa, Proc. of 28th Int. Symp. on Compound Semiconductors, Tokyo, Japan, 2001 (Inst. Phys. Conf. Ser. No. 170, p.555).

  39. "Electronic Structure of Piezoelectric In0.2Ga0.8N Quantum Dots in GaN Calculated Using a Tight-Binding Method";
    T. Saito and Y. Arakawa, Physica E 15, 169 (2002).

  40. "Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures";
    T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, and Y. Arakawa, Phys. Stat. Sol.(b) 238, 289 (2003).

  41. "Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers";
    T. Kakitsuka, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, and Y. Yoshikuni, Phys. Stat. Sol.(c) 0, 1157 (2003).

  42. "Polarization field and electronic states of GaN pyramidal quantum dots in AlN";
    T. Saito and Y. Arakawa, Phys. Stat. Sol.(c) 0, 1169 (2003).

  43. "Atomistic Calculation of Electronic States in III-V Nitride Quantum Dots" ;
    T. Saito and Y. Arakawa, Proc. of 3rd Int. Conf. on Numerical Simulation of Semiconductor Optoelectronic Devices,Tokyo, Japan, 2003 (IEEE, 03EX726, pp.1-4).

  44. "Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures";
    T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, and Y. Arakawa, J. Appl. Phys. 94, 6812 (2003).

  45. "Transition Energy Control via Strain in Single Quantum Dots Embedded in Micromachined Air-Bridge";
    T. Nakaoka, T. Kakitsuka, T. Saito, and Y. Arakawa, Jpn. J. Appl. Phys. 43, 4B, 2069 (2004).

  46. "Manipulation of electronic states in single quantum dots by micromachined air-bridge";
    T. Nakaoka, T. Kakitsuka, T. Saito, and Y. Arakawa, Appl. Phys. Lett. 84, 1392 (2004).

  47. "Carrier relaxation in closely stacked InAs quantum dots";
    T. Nakaoka, J. Tatebayashi, Y. Arakawa, and T. Saito, J. Appl. Phys. 96, 150 (2004).

  48. "Size, shape, and strain dependence of the g factor in self-assembled In(Ga)As quantum dots";
    T. Nakaoka, T. Saito, J. Tatebayashi, and Y. Arakawa, Physical Review B 70, 235337 (2004).

  49. "Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum Dots with Dot Spacing 0-6 nm";
    T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, and Y. Arakawa, Physica E 26, 217 (2005).

  50. "Tuning of g-factor in self-assembled In(Ga)As quantum dots through strain engineering";
    T. Nakaoka, T. Saito, J. Tatebayashi, S. Hirose, T. Usuki, N. Yokoyama, and Y. Arakawa, Physical Review B 71, 205301 (2005).

  51. "Optical polarization in columnar InAs/GaAs quantum dots: 8-band kp calculations";
    T. Saito, H. Ebe, Y. Arakawa, T. Kakitsuka, and M. Sugawara, Physical Review B 77, 195318 (2008).

  52. "Controlling Polarization in Quantum-dot Semiconductor Optical Amplifiers";
    N. Yasuoka, H. Ebe, K. Kawaguchi, M. Ekawa, T. Kita, O. Wada, M. Sugawara, T. Saito, and Y. Arakawa, Memoirs of the Graduate School of Engineering Kobe University, No. 1, pp. 1-8, 2009.

  53. "Magnetic field dependence of exciton fine structures in InAs/GaAs quantum dots: Exchange vs. Zeeman splittings";
    T. Saito, T. Nakaoka, and Y. Arakawa, Physica E 42, 2532 (2010).

  54. "Effect of electronic structure on single-photon emission in InAs/InP quantum dot with quasi-resonant excitation";
    T. Miyazawa, K. Takemoto, T. Nakaoka, T. Saito, S. Hirose, Y. Sakuma, N. Yokoyama, and Y. Arakawa, Physica Status Solidi (c) 8, 417 (2011).

  55. "Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot";
    T. Nakaoka, Y. Tamura, T. Saito, T. Miyazawa, K. Watanabe, Y. Ota, S. Iwamoto, and Y. Arakawa, Applied Physics Letters 99, 181109 (2011).

  56. "Effect of lateral electric field on the transition energies of neutral and charged excitons in In0.5Ga0.5As/GaAs quantum dots";
    T. Saito, T. Nakaoka, and Y. Arakawa, Physical Review B 91, 115306 (2015).

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Last update : 2015/3/13


Arakawa Lab., Institute of Industrial Science, University of Tokyo