- "Annealing Behavior of Spin Density in UHV Evaporated Amorphous
Silicon" ;

T. Yonehara, T. Saito, H. Kawarada, T. Hirata, M. Kakumu and I. Ohdomari, Physics Letters 78A, 192 (1980). - "A Structural Model for the Interface between Amorphous and (100)
Crystalline Silicon";

T. Saito and I. Ohdomari, Philosophical Magazine B43, 673 (1981). - "Solid Phase Epitaxial Growth of Vacuum Deposited Amorphous Silicon";

I. Ohdomari, M. Kakumu, T. Saito and T. Yonehara, Hyomen-Kagaku 2, 136 (1981). [in Japanese] - "Electron Paramagnetic Resonance Study on the Annealing Behavior of
Vacuum Deposited Amorphous Silicon on Crystalline Silicon";

I. Ohdomari, M. Kakumu, H. Sugahara, M. Hori, T. Saito, T. Yonehara and Y. Hajimoto, J. Appl. Phys. 52, 6617 (1981). - "Distortion Energy Distributions in the Random Network Model of
Amorphous Silicon";

T. Saito, T. Karasawa and I. Ohdomari, J. Non-Cryst. Solids 50, 271 (1982). - "Quantitative Analysis of Bond Rearrangement Process during Solid Phase
Epitaxy of Amorphous Silicon";

T. Saito and I. Ohdomari, Philosophical Magazine B49, 471 (1984). - "Analysis of the Si-on-Insulator Structure by Modeling of the Interface
Atomic Arrangement";

T. Saito, Y. Yamakoshi and I. Ohdomari, Mat. Res. Soc. Symp. Proc. Vol.25 (1984) p.531. - "Modeling of Interface Atomic Arrangement for Analysis of Solid Phase
Epitaxy and Si-on-Insulator Structure";

T. Saito and I. Ohdomari, in "Silicon-on-Insulator: Its Technology and Applications" ed. by S. Furukawa (KTK Science Publishers, Tokyo, 1985) p.171. - "Rapid Thermal Annealing of Si+ Implanted GaAs in the Presence of Arsenic
Pressure by GaAs Powder";

T. Hiramoto, T. Saito and T. Ikoma, Jpn. J. Appl. Phys. 24, L193 (1985). - "The Role of Gallium Antisite Defect in Activation and Type-Conversion in
Si Implanted GaAs";

T. Hiramoto, Y. Mochizuki, T. Saito and T. Ikoma, Jpn. J. Appl. Phys. 24, L921 (1985). - "Submicron Processing of III-V Semiconductors by Focused Ion Beam
Technology";

T. Hiramoto, T. Odagiri, P. Oldiges, T. Saito and T. Ikoma, in Proc. of Int. Symp. GaAs and Related Compounds, Las Vegas, Nevada, 1986, (Inst. Phys. Conf. Ser. No.83, p.295). - "Direct Experimental Estimation of Interface Dipole Effect of GaAs/AlAs
Heterojunction Band Offset by X-ray Photoelectron Spectroscopy";

K. Hirakawa, Y. Hashimoto, T. Saito and T. Ikoma, in Proc. of Int. Symp. GaAs and Related Compounds, Karuizawa, Japan, 1989, (Inst. Phys. Conf. Ser. No.106, p.345). - "Effect of Stacking Sequence on Valence Bands in Ga/As/Ge (001) Monolayer
Superlattices";

T. Saito and T. Ikoma, Appl. Phys. Lett. 55, 1300 (1989). - "Relation between Band Gap Shrinkage and Overlap of Interface States in
Polar (GaAs)n/(Ge2)n [001] Superlattice";

T. Saito and T. Ikoma, Superlattices and Microstructures 9, 377 (1991). - "Role of Interface States in Band Structures of Short-Period
(GaAs)
_{n}/(Ge_{2})_{n}[001] Superlattices under a Zero-Field Model";

T. Saito and T. Ikoma, Physical Review B 45, 1762 (1992). - "Impurity-Related Bands in GaAs Doped with Ge, Zn, and Se Monolayers";

T. Saito and T. Ikoma, Surface Science 267, 57 (1992). - "Self-Consistent Tight-Binding Calculations of Band Discontinuity in
GaAs/AlAs Superlattices Controlled by Group-IV-Element Insertion Layers";

T. Saito and T. Ikoma, Superlattices and Microstructures 12, 81 (1992). - "Role of ultrathin Si layers inserted at GaAs/AlAs heterointerfaces";

Y. Hashimoto, T. Saito, K. Hirakawa, and T. Ikoma, in Proc. of Int. Symp. GaAs and Related Compounds, Karuizawa, Japan, 1992, (Inst. Phys. Conf. Ser., No.129, p.259). - "Band Discontinuity and Effects of Si-Insertion Layer at (311)A GaAs/AlAs
Interface";

T. Saito, Y. Hashimoto, and T. Ikoma, Solid-State Electronics 37, 743 (1994). - "Determination and artificial control of heterojunction band
discontinuities";

Y. Hashimoto, T. Saito, and T. Ikoma, Oyo Buturi 63, 116 (1994). [in Japanese] - "Band Discontinuity in GaAs/AlAs Superlattices with InAs Strained
Insertion-Layers";

T. Saito, Y. Hashimoto, and T. Ikoma, Superlattices and Microstructures 15, 405 (1994). - "Band Discontinuity at the (311)A GaAs/AlAs Interface and Possibility
of Its Control by Si Insertion Layers";

T. Saito, Y. Hashimoto, and T. Ikoma, Physical Review B 50, 17242 (1994). - "Artificial control of heterojunction band discontinuities by two delta
dopings";

Y. Hashimoto, N. Sakamoto, K. Agawa, T. Saito, and T. Ikoma, in Proc. of Int. Symp. on Compound Semiconductors, San Diego, USA, 1994, (Inst. Phys. Conf. Ser., No. 141, p.149). - "Effects of ZnSe and P Insertion Layers on Band Offsets at (100) GaAs/AlAs
Interfaces";

T. Saito and T. Ikoma, Applied Surface Science 107, 222 (1996). - "Possibility of Band-Discontinuity Control at (100) GaAs/AlAs Interfaces
by ZnSe Insertion Layers";

T. Saito, Transactions of the Materials Research Society of Japan, Vol. 20, p. 739 (1996). - "Band Discontinuities at the (100) GaAs/AlAs Interfaces with In-
and P-Insertion Layers: Effects of Isoelectronic Impurity Layers";

T. Saito, Y. Hashimoto, and T. Ikoma, Solid State Communications 101, 1 (1997). - "Control of band discontinuities at (100) GaAs/AlAs interfaces by ZnSe
insertion layers: Comparison with Si insertion layers";

T. Saito, Physical Review B 56, 14933 (1997). - "Strain distribution and electronic structure of InAs quantum dots
on GaAs: Atomic scale calculations";

T. Saito, J. N. Schulman, and Y. Arakawa, Physics of Low-Dimensional Structures 11/12, 19 (1997). - "Atomic Scale Calculations for Strain Distribution and Electronic Structure
of InAs Pyramidal Quantum Dots on (100) GaAs";

T. Saito, J. N. Schulman, and Y. Arakawa, Proc. of 24th Int. Symp. on Compound Semiconductors, San Diego, USA, 1997 (IEEE, 97TH8272, p.643). - "Electronic structure of (311)-InAs monolayers embedded in GaAs";

T. Saito, Superlattices and Microstructures 23, 219 (1998). - "Strain-energy distribution and electronic structure of InAs pyramidal
quantum dots with uncovered surfaces: Tight-binding analysis";

T. Saito, J. N. Schulman, and Y. Arakawa, Physical Review B 57, 13016 (1998). - "Atomic Structure and Strain in InGaN Alloy Calculated Using a
Valence-Force-Field Method";

T. Saito and Y. Arakawa, Proc. of 2nd Int. Symp. on Blue Laser and Light Emitting Diodes, Chiba, Japan, 1998 (Ohmsha, p.292). - "Strain Energy Distribution in GaN and InGaN Quantum Dots on
AlN Buffer Layers: A Valence-force-field Approach";

T. Saito and Y. Arakawa, Proc. of 25th Int. Symp. on Compound Semiconductors, Nara, Japan, 1998 (Inst. Phys. Conf. Ser. No.162, p.741). - "Atomic structure and phase stability of In
_{x}Ga_{1-x}N random alloys calculated using a valence-force-field method";

T. Saito and Y. Arakawa, Physical Review B 60, 1701 (1999). - "Formation of InGaN Quantum Dots: MOCVD Growth and Electronic
Structures";

T. Saito, T. Someya, K. Tachibana, S. Ishida, O. Moriwaki, and Y. Arakawa, Proc. of 3rd SANKEN Int. Symp. on Advanced Nanoelectronics: Devices, Materials, and Computing, Osaka, Japan, 2000 (Memoirs of The Institute of Scientific and Industrial Research, Osaka University, Special Issue, Vol.57, p.167). - "Quantum confined electronic states in InGaN dots embedded in GaN:
Tight-binding calculation";

T. Saito and Y. Arakawa, Proc. of 27th Int. Symp. on Compound Semiconductors, Monterey, California, 2000 (IEEE, 00TH8498, p.285). - "Effects of internal piezoelectric field on electronic states of InGaN
quantum dots grown on GaN";

T. Saito and Y. Arakawa, J. of Crystal Growth 237-239, 1172 (2002). - "Quantum-Confined Stark Effect in InGaN Pyramidal Dots Induced by the
Piezoelectric Field";

T. Saito and Y. Arakawa, Proc. of 28th Int. Symp. on Compound Semiconductors, Tokyo, Japan, 2001 (Inst. Phys. Conf. Ser. No. 170, p.555). - "Electronic Structure of Piezoelectric In
_{0.2}Ga_{0.8}N Quantum Dots in GaN Calculated Using a Tight-Binding Method";

T. Saito and Y. Arakawa, Physica E 15, 169 (2002). - "Effect of strain variation on photoluminescence from InGaAs quantum dots
in air-bridge structures";

T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, and Y. Arakawa, Phys. Stat. Sol.(b)**238**, 289 (2003). - "Numerical analysis of transition energy shift in InAs/GaAs
quantum dots induced by strain-reducing layers";

T. Kakitsuka, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, and Y. Yoshikuni, Phys. Stat. Sol.(c)**0**, 1157 (2003). - "Polarization field and electronic states of GaN pyramidal quantum dots in
AlN";

T. Saito and Y. Arakawa, Phys. Stat. Sol.(c)**0**, 1169 (2003). - "Atomistic Calculation of Electronic States in III-V Nitride Quantum Dots"
;

T. Saito and Y. Arakawa, Proc. of 3rd Int. Conf. on Numerical Simulation of Semiconductor Optoelectronic Devices,Tokyo, Japan, 2003 (IEEE, 03EX726, pp.1-4). - "Strain-induced modifications of the electronic states of InGaAs quantum
dots embedded in bowed airbridge structures";

T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, and Y. Arakawa, J. Appl. Phys.**94**, 6812 (2003). - "Transition Energy Control via Strain in Single Quantum Dots
Embedded in Micromachined Air-Bridge";

T. Nakaoka, T. Kakitsuka, T. Saito, and Y. Arakawa, Jpn. J. Appl. Phys.**43**, 4B, 2069 (2004). - "Manipulation of electronic states in single quantum dots
by micromachined air-bridge";

T. Nakaoka, T. Kakitsuka, T. Saito, and Y. Arakawa, Appl. Phys. Lett.**84**, 1392 (2004). - "Carrier relaxation in closely stacked InAs quantum dots";

T. Nakaoka, J. Tatebayashi, Y. Arakawa, and T. Saito, J. Appl. Phys.**96**, 150 (2004). - "Size, shape, and strain dependence of the
*g*factor in self-assembled In(Ga)As quantum dots";

T. Nakaoka, T. Saito, J. Tatebayashi, and Y. Arakawa, Physical Review B**70**, 235337 (2004). - "Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum
Dots with Dot Spacing 0-6 nm";

T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, and Y. Arakawa, Physica E**26**, 217 (2005). - "Tuning of
*g*-factor in self-assembled In(Ga)As quantum dots through strain engineering";

T. Nakaoka, T. Saito, J. Tatebayashi, S. Hirose, T. Usuki, N. Yokoyama, and Y. Arakawa, Physical Review B**71**, 205301 (2005). - "Optical polarization in columnar InAs/GaAs quantum dots:
8-band
**k**•**p**calculations";

T. Saito, H. Ebe, Y. Arakawa, T. Kakitsuka, and M. Sugawara, Physical Review B**77**, 195318 (2008). - "Controlling Polarization in Quantum-dot Semiconductor Optical Amplifiers";

N. Yasuoka, H. Ebe, K. Kawaguchi, M. Ekawa, T. Kita, O. Wada, M. Sugawara, T. Saito, and Y. Arakawa, Memoirs of the Graduate School of Engineering Kobe University, No. 1, pp. 1-8, 2009. - "Magnetic field dependence of exciton fine structures in InAs/GaAs quantum
dots: Exchange vs. Zeeman splittings";

T. Saito, T. Nakaoka, and Y. Arakawa, Physica E**42**, 2532 (2010). - "Effect of electronic structure on single-photon emission in InAs/InP
quantum dot with quasi-resonant excitation";

T. Miyazawa, K. Takemoto, T. Nakaoka, T. Saito, S. Hirose, Y. Sakuma, N. Yokoyama, and Y. Arakawa, Physica Status Solidi (c)**8**, 417 (2011). - "Competing influence of an in-plane electric field on the Stark shifts
in a semiconductor quantum dot";

T. Nakaoka, Y. Tamura, T. Saito, T. Miyazawa, K. Watanabe, Y. Ota, S. Iwamoto, and Y. Arakawa, Applied Physics Letters**99**, 181109 (2011). - "Effect of lateral electric field on the transition energies of neutral
and charged excitons in In
_{0.5}Ga_{0.5}As/GaAs quantum dots";

T. Saito, T. Nakaoka, and Y. Arakawa, Physical Review B**91**, 115306 (2015).

*Last update : 2015/3/13*

Arakawa Lab., Institute of Industrial Science, University of Tokyo