Title Journal Authors
"Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique" APL Materials 4, 076104 (2016). H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, and H. Fujioka
"Fabrication of InGaN thin-film transistors using pulsed sputtering deposition" Scientific Reports 6, 29500, (2016). Takeki Itoh, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, and Hiroshi Fujioka
" InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature" Appl. Phys. Lett. 109, 032106 (2016). Khe Shin Lye, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, and Hiroshi Fujioka
" High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering" APL Materials 4, 086103 (2016). Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta1, and Hiroshi Fujioka
"Spatial distribution of transferred charges across the heterointerface between perovskite transition metal oxides LaNiO3 and LaMnO3" Appl. Phys. Lett. 108, 111603 (2016). M. Kitamura, K. Horiba, M. Kobayashi, E. Sakai, M. Minohara, T. Mitsuhashi, A. Fujimori, T. Nagai, H. Fujioka, and H. Kumigashira
"Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal-insulator-semiconductor field-effect transistors" Journal of Appl. Phys. 120, 085709 (2016). Atsushi Kobayashi, Khe Shin Lye, Kohei Ueno, Jitsuo Ohta, and Hiroshi Fujioka
"High-current-density indium nitride ultrathin-film transistors on glass substrates" Accepted for press in Appl. Phys. Lett. Takeki Itoh, Atsushi Kobayash, Jitsuo Ohta, and Hiroshi Fujioka

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