Tiny but mighty: sophisticated next-gen transistors hold great promise

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Researchers at the Institute of Industrial Science, The University of Tokyo, have produced a new type of transistor, which is a key component of electronics. The transistor channel was constructed from indium oxide doped with gallium to increase carrier mobility by suppressing carrier scattering. The gallium-doped indium oxide layer was included in a gate-all-around transistor structure to realize both high carrier mobility and reliability. The transistor outperforms similar devices in reliability and performance.

2025.06.06

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Tiny but mighty: sophisticated next-gen transistors hold great promise

Researchers at #UTokyo_IIS produce tiny transistors with high performance and reliability through the use of an innovative material and design

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