Nanometer scale anodic oxidation of SC1-treated Si (111) surfaces by AFM

Won-chul Moon, Tatsuo Yoshinobu and Hiroshi Iwasaki

The Institute of Scientific and Industrial Research (ISIR), Osaka
University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.

We have fabricated nanostructures on SC1-treated n-type Si (111) substrates by anodic oxidation with atomic force microscopy (AFM). In this study, we compare the anodic oxidation on the SC1-treated Si surfaces with the previously studied anodic oxidation processes on Si substrates [1]. We have investigated the dependence of the size of the structures on the bias voltage in order to optimize the conditions for the nanofabrication of dots and line patterns of the desired shape and size. The average height and average width of the oxide line e patterns were 4.6nm and 490nm, respectively, for a bias voltage of 18V. On a HF-treated surface oxide line patterns of 1.9nm in height and 340nm in width were formed at the same bias voltage.

[1] Jpn. J. Appl. Phys., 38(1B) (1999) pp.483-486.